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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *Fast Switching Speed *Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS *Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC converter. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 450 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w 400 8 V V 7 A 14 2 40 150 -55~150 A A W .cn mi e Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.125 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4242 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V A A Collector Cutoff Current VCB= 450V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain Switching times ton tstg tf Turn-on Time Storage Time ww w scs .i VEB= 8V; IC= 0 IC= 4A ; VCE= 5V .cn mi e 10 100 100 1.0 s s s IC= 5A , IB1= -IB2=1A RL= 30; VCC= 150V 2.5 Fall Time 0.5 isc Websitewww.iscsemi.cn 2 |
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